In late September 2025, KIOXIA Iwate Corporation, led by CEO Koichiro Shibayama, will evaluate a fresh approach to semiconductor inspection using a GaN-based electron beam technology. This technology comes from Photoelectron Soul Inc. (PeS), a startup that grew out of Nagoya University, and the Amano–Honda Laboratory at the same institution. With this collaboration, they aim to enhance how we manufacture semiconductors by leveraging the unique qualities of gallium nitride (GaN).
PeS has crafted a next-generation electron gun designed explicitly for GaN photocathodes. This innovation allows for more precise electron microscopy, which is essential for analyzing tiny transistors and complex structures critical in today’s semiconductor devices. By using GaN photocathodes, they can inspect electrical properties that were often hard to measure with older techniques.
This technology has the potential to transform non-contact electrical inspection during the early stages of semiconductor production. It tackles the persistent challenges of identifying defects in high-aspect-ratio features, potentially improving manufacturing yields. KIOXIA Iwate’s upcoming trials will look into how this new method can directly affect defect detection rates and enhance yield while allowing for deeper investigations into manufacturing issues.
Historically, electron beam technology has been recognized in the semiconductor field for over 25 years. Yet, various challenges—mainly the fragility of traditional technologies—have limited practical applications. Researchers at Nagoya University have made significant progress in this area, developing GaN photocathodes that are over twenty times more durable than their predecessors. This breakthrough marks a major milestone after decades of attempts to enhance e-beam technologies.
Beyond durability, PeS has introduced the Digital Selective e-Beaming (DSeB) technique. This method synchronizes the scanning of the electron beam with the energy delivered to the GaN photocathode. As a result, it can direct electron beams precisely to specific locations on scanning electron microscopy images.
The significance of this technology grows as semiconductor devices increase in complexity. While creating smaller devices is becoming easier, the methods for inspecting these tiny components have struggled to keep up. PeS is addressing two major hurdles:
First, inspecting nanoscale transistors within dense semiconductor chips has been particularly challenging. Previous techniques often failed. Through DSeB, PeS has made it possible to observe specific transistor areas non-invasively, which could change how manufacturers ensure quality.
Second, inspecting the intricate structures of three-dimensional devices, like 2.5D or 3D chiplets, has also been problematic. High-aspect-ratio trenches are common in these devices, making it tough to check for defects. DSeB allows focused examination of these trenches, shedding light on their structural integrity.
These advancements signal a new chapter in semiconductor manufacturing and could help solve ongoing yield issues. The ability to perform accurate, non-contact inspections during production stages is unprecedented. KIOXIA Iwate’s evaluations could lead to more effective defect identification, boosting overall production quality.
As KIOXIA dives into these evaluations in real-world settings, there’s a growing sense of optimism about integrating this cutting-edge technology into future manufacturing processes. This partnership between academia and industry showcases how collaboration can drive meaningful progress. It illustrates the need for such alliances in fostering innovation.
Looking ahead, the implications of GaN-based technology extend well beyond the lab. As semiconductor devices continue to evolve, the need for effective inspection methods will only grow. Non-contact techniques that provide significant insights during production will be crucial as we advance.
In summary, the advancements in GaN-based electron beam technology represent a pivotal shift in semiconductor manufacturing. By overcoming historical challenges and meeting the demand for smaller, efficient devices, this technology illustrates the power of collaboration between universities and the industry.
For more in-depth information on the importance of this technology in semiconductor manufacturing, you can refer to sources like IEEE Xplore or Semanticscholar.
